Model: | AIMZHN120R030M1TXKSA1 |
---|---|
Product Category: | Single FETs, MOSFETs |
Manufacturer: | IR (Infineon Technologies) |
Description: | SIC_DISCRETE |
Encapsulation: | - |
Package: | Tube |
RoHS Status: | 1 |
Obtain quotation information
|
Quantity
Price
Total Price
1
$22.6400
$22.6400
10
$20.1100
$201.1000
240
$16.4200
$3,940.8000
TYPE | DESCRIPTION |
Mfr | IR (Infineon Technologies) |
Series | - |
Package | Tube |
Product Status | ACTIVE |
Package / Case | TO-247-4 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | SiC (Silicon Carbide Junction Transistor) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
Rds On (Max) @ Id, Vgs | 38mOhm @ 27A, 20V |
Power Dissipation (Max) | 326W (Tc) |
Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
Supplier Device Package | PG-TO247-4-14 |
Grade | Automotive |
Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
Vgs (Max) | +23V, -5V |
Drain to Source Voltage (Vdss) | 1200 V |
Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 1738 pF @ 800 V |
Qualification | AEC-Q101 |