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Understanding the Key Characteristics and Specifications of the FET, MOSFET Transistor PSMN8R7-100YSFX
    2024-11-16 10:33:14
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In modern electronic technology and power electronics, Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) play pivotal roles. Serving as electronic switches and amplifiers, they are widely applied in power management, motor control, signal processing, and numerous other fields. This article will delve into the primary characteristics and specifications of the PSMN8R7-100YSFX, a MOSFET transistor manufactured by Nexperia.

 

  1. Overview of FETs and MOSFETs

FETs are electronic devices that control current flow based on an electric field. They are primarily categorized into Junction Field-Effect Transistors (JFETs) and MOSFETs. Among them, MOSFETs are indispensable components in modern integrated circuits due to their high input impedance, low power consumption, and ease of integration.

 

The structure of a MOSFET includes a gate, a source, a drain, and a substrate. Its core consists of an insulating layer made of metal oxide (typically silicon dioxide) and semiconductor material. The gate voltage controls the flow of electrons in the channel, thereby regulating the current.

 

  1. Key Characteristics of PSMN8R7-100YSFX

PSMN8R7-100YSFX, a high-performance N-channel MOSFET offered by Nexperia, is suitable for various industrial and consumer applications. Its main characteristics are as follows:

 

High Voltage Tolerance: PSMN8R7-100YSFX boasts a drain-source breakdown voltage (Vds) of up to 100V, allowing it to operate stably in high-voltage environments without breakdown.

High Current Handling Capacity: The continuous drain current (Id) of this device reaches 90A, enabling it to handle large current loads and suit applications requiring high current output.

Low On-Resistance: PSMN8R7-100YSFX exhibits a drain-source on-resistance (Rds(on)) of just 7.2mΩ at specific conditions (10V, 25A), reducing power loss and enhancing overall system efficiency.

Wide Operating Temperature Range: The operating temperature range of this device spans from -55°C to +175°C, ensuring stable operation in various extreme environments and meeting the needs of diverse applications.

High Power Dissipation: With a power dissipation (Pd) of up to 198W, PSMN8R7-100YSFX prevents overheating in high-power applications, thereby extending the device's lifespan.

Fast Switching Speed: MOSFETs are known for their rapid switching speeds, and PSMN8R7-100YSFX is no exception. Its rise and fall times are 11ns and 12.7ns, respectively, minimizing energy loss during switching and improving the system's dynamic performance.

Low Gate-Source Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is the gate voltage at which the MOSFET begins to conduct. PSMN8R7-100YSFX has a low threshold voltage, simplifying the drive circuit and enhancing the system's overall performance.

High Reliability: As a leading semiconductor manufacturer, Nexperia's products are renowned for their quality and reliability. PSMN8R7-100YSFX undergoes rigorous testing and screening to ensure exceptional performance in practical applications.

III. Application Fields of PSMN8R7-100YSFX

With its outstanding performance and specifications, PSMN8R7-100YSFX finds wide applications in multiple fields:

 

Power Management: In switching power supplies, UPS systems, and other power management systems, PSMN8R7-100YSFX's high voltage tolerance, high current handling capacity, and low on-resistance make it an ideal electronic switch and rectifier.

Motor Control: In motor drive systems, MOSFETs serve as key components for controlling motor startup, stop, and speed regulation. PSMN8R7-100YSFX's fast switching speed and high reliability make it a preferred choice in motor control applications.

Signal Processing: In communication, audio, and video signal processing systems, MOSFETs act as amplifiers and switches for signal amplification and switching. PSMN8R7-100YSFX's low noise characteristics and high linearity make it ideal for signal processing applications.

LED Lighting: In LED lighting systems, MOSFETs serve as core components in constant-current drivers, regulating the current and brightness of LED lights. PSMN8R7-100YSFX's high efficiency and stability make it a preferred choice in LED lighting applications.

Industrial Control: In industrial automation and control systems, MOSFETs serve as electronic switches and amplifiers for amplifying and switching sensor signals. PSMN8R7-100YSFX's wide operating temperature range and high reliability make it ideal for industrial control applications.

  1. Conclusion

As a high-performance N-channel MOSFET offered by Nexperia, PSMN8R7-100YSFX boasts exceptional performance and specifications, finding wide applications in multiple fields. By deeply understanding its characteristics and specifications, we can better utilize this device to design more efficient, reliable, and stable electronic systems.

 

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